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sth60n10/fi STW60N10 n - channel enhancement mode power mos transistor n typical r ds(on) = 0.02 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n very high current capability n 175 o c operating temperature n application oriented characterization applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram 1 2 3 may 1993 type v dss r ds(on) i d sth60n10 sth60n10fi STW60N10 100 v 100 v 100 v < 0.025 w < 0.025 w < 0.025 w 60 a 36 a 60 a to-218 isowatt218 absolute maximum ratings symbol parameter value unit sth/STW60N10 sth60n10fi v ds drain-source voltage (v gs = 0) 100 v v dgr drain- gate voltage (r gs = 20 k w )100v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c6036a i d drain current (continuous) at t c = 100 o c42 22a i dm ( ) drain current (pulsed) 240 240 a p tot total dissipation at t c = 25 o c20070w derating factor 1.33 0.56 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t stg storage temperature -65 to 175 -65 to 150 o c t j max. operating junction temperature 175 150 o c ( ) pulse width limited by safe operating area 1 2 3 1 2 3 to-247 1/11
thermal data to-218/to-247 isowatt218 r thj-case thermal resistance junction-case max 0.75 1.79 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 60 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 720 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 180 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 37 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a22.94v r ds(on) static drain-source on resistance v gs = 10 v i d = 30 a v gs = 10 v i d = 30 a t c = 100 o c 0.02 0.025 0.05 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 60 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 30 a 25 35 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 4000 1100 250 5000 1400 350 pf pf pf sth60n10/fi STW60N10 2/11
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 80 v i d = 30 a r g = 50 w v gs = 10 v (see test circuit, figure 3) 90 270 130 380 ns ns (di/dt) on turn-on current slope v dd = 80 v i d = 60 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 270 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d = 30 a v gs = 10 v 120 16 60 170 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 80 v i d = 60 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 200 210 410 280 290 570 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 60 240 a a v sd ( * ) forward on voltage i sd = 60 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c (see test circuit, figure 5) 180 1 11 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating areas for to-218 and to-247 safe operating areas for isowatt218 sth60n10/fi STW60N10 3/11
thermal impedeance for to-218 and to-247 derating curve for to-218 and to-247 output characteristics thermal impedance for isowatt218 derating curve for isowatt218 transfer characteristics sth60n10/fi STW60N10 4/11
transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate threshold voltage vs temperature sth60n10/fi STW60N10 5/11
turn-on current slope turn-off drain-source voltage slope cross-over time switching safe operating area accidental overload area source-drain diode forward characteristics sth60n10/fi STW60N10 6/11
fig. 2: unclamped inductive waveforms fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode reverse recovery time fig. 1: unclamped inductive load test circuits sth60n10/fi STW60N10 7/11
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.208 a1 2.87 0.113 a2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 c 0.4 0.8 0.015 0.031 d 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 e 15.3 15.95 0.602 0.628 l 15.57 0.613 l1 3.7 4.3 0.145 0.169 q 5.3 5.84 0.208 0.230 ?p 3.5 3.71 0.137 0.146 d q ? a a2 a1 c e e b1 b b2 l l1 to-247 mechanical data sth60n10/fi STW60N10 8/11
dim. mm inch min. typ. max. min. typ. max. a 4.7 4.9 0.185 0.193 c 1.17 1.37 0.046 0.054 d 2.5 0.098 e 0.5 0.78 0.019 0.030 f 1.1 1.3 0.043 0.051 g 10.8 11.1 0.425 0.437 h 14.7 15.2 0.578 0.598 l2 C 16.2 C 0.637 l3 18 0.708 l5 3.95 4.15 0.155 0.163 l6 31 1.220 r C 12.2 C 0.480 ? 4 4.1 0.157 0.161 r a c d e h f g l6 ? l3 l2 l5 1 2 3 to-218 (sot-93) mechanical data p025a sth60n10/fi STW60N10 9/11
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.45 1 0.017 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u 4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 isowatt218 mechanical data p025c sth60n10/fi STW60N10 10/11
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a sth60n10/fi STW60N10 11/11

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